| Fabricant | No de pièce | Fiches technique | Description |
 Omron Electronics LLC |
3G3MV-PFI1030-E
|
131Kb/8P
|
Frequency Inverter
|
 Qorvo, Inc |
ACT5101QI103-T
|
3Mb/59P
|
23V Buck-Boost Converter with Integrated MOSFETs
Rev. E, November 2019
|
|
ACT88320QI103-T
|
2Mb/57P
|
Advanced PMU with Inrush Control and Bypass Switch
Rev. E, November 2019
|
 Active-Semi, Inc |
ACT88320QI103-T
|
3Mb/50P
|
Advanced PMU with Inrush Control and Bypass Switch
Rev 2.0, 20-Dec-2017
|
 Device Engineering Inco... |
DEI1030
|
289Kb/6P
|
Lighting Bus Mapping Circuit
|
|
DEI1030-G
|
289Kb/6P
|
Lighting Bus Mapping Circuit
|
|
DEI1032
|
373Kb/8P
|
ARINC 429 Line Driver Integrated Circuit
|
|
DEI1032-G
|
373Kb/8P
|
ARINC 429 Line Driver Integrated Circuit
|
|
DEI1038
|
270Kb/9P
|
ARINC 429 Line Driver Integrated Circuit
|
|
DEI1038-G
|
270Kb/9P
|
ARINC 429 Line Driver Integrated Circuit
|
 Sanken electric |
EKI10300
|
252Kb/6P
|
DC-DC converters
|
 Inchange Semiconductor ... |
EKI10300
|
295Kb/2P
|
isc N-Channel MOSFET Transistor
|
 SHENZHEN DOINGTER SEMIC... |
EKI10300
|
948Kb/3P
|
N-Channel MOSFET uses advanced trench technology
|
 Sanken electric |
EKI10300
|
597Kb/9P
|
N ch Trench Power MOSFET
|
 Bourns Electronic Solut... |
EMI103T-RC
|
120Kb/1P
|
EMI T Network Filters Taped packaged for automated insertion Rated current: 5 A
|
 Kemet Corporation |
F464DI103J2K5ZLH0J
|
56Kb/1P
|
F464, Film, Metallized Polypropylene, Commercial Grade, 0.01 uF, 5%, 2,500 V, 85C, Lead Spacing = 22.5mm
|
 Sanken electric |
FKI10300
|
266Kb/6P
|
N ch Trench Power MOSFET
|
 Inchange Semiconductor ... |
FKI10300
|
338Kb/2P
|
isc N-Channel MOSFET Transistor
|
 Sanken electric |
FKI10300
|
607Kb/9P
|
N ch Trench Power MOSFET
|
|
GKI10301
|
367Kb/6P
|
N ch Trench Power MOSFET
|