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BU808DFH Fiches technique(PDF) 1 Page - STMicroelectronics

No de pièce BU808DFH
Description  HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON TRANSISTOR
PDF  7 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

BU808DFH Fiches technique(HTML) 1 Page - STMicroelectronics

  BU808DFH Datasheet HTML 1Page - STMicroelectronics BU808DFH Datasheet HTML 2Page - STMicroelectronics BU808DFH Datasheet HTML 3Page - STMicroelectronics BU808DFH Datasheet HTML 4Page - STMicroelectronics BU808DFH Datasheet HTML 5Page - STMicroelectronics BU808DFH Datasheet HTML 6Page - STMicroelectronics BU808DFH Datasheet HTML 7Page - STMicroelectronics  
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BU808DFH
HIGH VOLTAGE FAST-SWITCHING
NPN POWER DARLINGTON TRANSISTOR
s
NEW Fully Plastic TO-220 for HIGH
VOLTAGE APPLICATIONS
s
NPN MONOLITHIC DARLINGTON WITH
INTEGRATED FREE-WHEELING DIODE
s
HIGH VOLTAGE CAPABILITY ( > 1400 V )
s
HIGH DC CURRENT GAIN ( TYP. 150 )
s
LOW BASE-DRIVE REQUIREMENTS
s
DEDICATED APPLICATION NOTE AN1184
s
FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
s
CREEPAGE PATH > 4 mm
APPLICATIONS
s
COST EFFECTIVE SOLUTION FOR
HORIZONTAL DEFLECTION IN LOW END
TV UP TO 21 INCHES.
DESCRIPTION
The BU808DFH is a NPN transistor in monolithic
Darlington configuration. It is manufactured using
Multiepitaxial Mesa technology for cost-effective
high performance.
®
INTERNAL SCHEMATIC DIAGRAM
April 2002
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage (IE = 0)
1400
V
VCEO
Collector-Emitter Voltage (IB = 0)
700
V
VEBO
Emitter-Base Voltage (IC = 0)
5
V
IC
Collector Current
8
A
ICM
Collector Peak Current (tp < 5 ms)
10
A
IB
Base Current
3
A
IBM
Base Peak Current (tp < 5 ms)
6
A
Ptot
Total Dissipation at Tc = 25
o C42
W
Visol
Insulation Withstand Voltage (RMS) from All
Three Leads to Exernal Heatsink
2500
V
Tstg
Storage Temperature
-65 to 150
oC
Tj
Max. Operating Junction Temperature
150
oC
TO-220FH
(see page 6)
1/7


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