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ESDALC6-4N4 Fiches technique(PDF) 3 Page - STMicroelectronics |
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ESDALC6-4N4 Fiches technique(HTML) 3 Page - STMicroelectronics |
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3 / 11 page ![]() ESDALC6-4N4 Characteristics Doc ID 022191 Rev 2 3/11 Figure 3. Peak pulse power versus initial junction temperature (typical values, 8/20 µs waveform) Figure 4. Peak pulse power versus exponential pulse duration (typical values) 0 10 20 30 40 50 60 25 35 45 55 65 75 85 95 105 115 125 135 145 155 165 175 Ppp (W) T (°C) j P (W) PP 1 10 100 10 100 1000 t (µs) p Figure 5. Clamping voltage versus peak pulse current (typical values, 8/20 µs waveform) Figure 6. Forward voltage drop versus peak forward current (typical values) I (A) PP 0.1 1.0 10.0 789 10 11 12 V (V) CL I (A) FM 0.0 1.0 2.0 0.8 1.3 1.8 2.3 V (V) FM Figure 7. Junction capacitance versus reverse voltage applied (typical values) Figure 8. Leakage current versus junction temperature (typical values) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0123 4 5 6 C(pF) F=1 MHz Vosc=30mVRMS Vr=0V Tj=25 °C VR(V) I R (nA) 0.10 1.00 10.00 25 35 45 55 65 75 85 VR=VRM=3V Tj(°C) |
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