M95040-DF datasheet(34/46 Pages) STMICROELECTRONICS

34 / 46 page

DC and AC parameters

M950x0-W M950x0-R M950x0-DF

34/46

DocID6512 Rev 13

Table 17. DC characteristics (M950x0-R or M95040-DF, device grade 6)

Symbol

Parameter

Test conditions in addition to those defined

in Table 10 or Table 11 and Table 12(1)

Min.

Max.

Unit

ILI

Input leakage current

VIN = VSS or VCC

-± 2

µA

ILO

Output leakage current

S = VCC, voltage applied on Q = VSS or VCC

-± 2

µA

ICC

Supply current (Read)

VCC = 1.8 V or 1.7 V, fC = 5 MHz,

C = 0.1 VCC/0.9 VCC, Q = open

-2

ICC0(2) Supply current (Write)

VCC = 1.8 V or 1.7 V, during tW, S = VCC

-5

ICC1

Supply current (Standby)

VCC = 1.8 V or 1.7 V, S = VCC, VIN = VSS or

VCC

-1

µA

VIL

Input low voltage

VCC < 2.5 V

–0.45

0.25 VCC

VIH

Input high voltage

VCC < 2.5 V

0.75 VCC

VCC+1

VOL

Output low voltage

IOL = 0.15 mA, VCC = 1.8 V or 1.7 V

0.3

VOH

Output high voltage

IOH = –0.1 mA, VCC = 1.8 V or 1.7 V

0.8 VCC

-V

VRES(2)

Internal reset threshold

voltage

-1.0(3)

1.65(4)

1. If the application uses the M950x0-R or M95040-DF devices with 2.5 V

≤VCC ≤5.5 V and -40 °C ≤TA ≤+85 °C, please refer to

Table 16: DC characteristics (M950x0-W, device grade 6), rather than to the above table.

2. Characterized only, not tested in production.

3. 0.5 V with the device identified by process letter K.

4. 1.5 V with the device identified by process letter K.

M95040-DF Fiches technique(PDF) 34 Page - STMicroelectronics

M95040-DF Fiches technique(HTML) 34 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46

Fiches technique Télécharger

Lien URL