M950X0-W datasheet(32/46 Pages) STMICROELECTRONICS

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DC and AC parameters

M950x0-W M950x0-R M950x0-DF

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Table 13. Cycling performance(1)

1. Cycling performance for products identified by process letter K (previous products were specified with 1

million cycles at 25 °C).

Symbol

Parameter

Test conditions

Min.

Max.

Unit

Ncycle

Write cycle endurance

TA ≤ 25 °C,

VCC(min) < VCC < VCC(max)

4,000,000

Write cycle

TA = 85 °C,

VCC(min) < VCC < VCC(max)

1,200,000

Table 14. Memory cell data retention(1)

1. For products identified by process letter K (previous products were specified with a data retention of 40

years at 55°C). The data retention behavior is checked in production, while the 200-year limit is defined

from characterization and qualification results.

Parameter

Test conditions

Min.

Unit

Data retention

TA = 55 °C

200

Year

Table 15. Capacitance (1)

1. Sampled only, not 100% tested, at TA=25 °C and a frequency of 5 MHz.

Symbol

Parameter

Test condition

Min.

Max.

Unit

COUT

Output capacitance (Q)

VOUT = 0 V

CIN

Input capacitance (D)

VIN = 0 V

Input capacitance (other pins)

VIN = 0 V

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