ST1S15 datasheet(9/27 Pages) STMICROELECTRONICS

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ST1S15

Electrical characteristics

DocID023280 Rev 4

9/27

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VIN_TR

Line transient response.

Output voltage variation over

the nominal DC level

tR = tF = 10 µs

case 1: VIN = 2.5 to 3.1 V

case 2: VIN = 3.9 to 4.5 V

IOUT = 50 mA,

VOUT = 1.82 V

±50

IOUT = 250 mA,

VOUT = 1.82 V

IOUT_TR

Load transient response

tR= tF= 0.1 µs

case 1: VIN = 2.5 V

case 2: VIN = 3.6 V

case 3: VIN = 4.5 V

IOUT = 0 to 150 mA,

VOUT = 1.82 V

±50

IOUT = 50 to 250 mA,

VOUT = 1.82 V

±70

IOUT = 150 to 400 mA,

VOUT = 1.82 V

±70

Logic inputs

VIL

Low-level input voltage

(EN, MODE pins)

0.4

VIH

High-level input voltage

(EN, MODE pins)

1.2

ILK-I

Input leakage current

(EN, MODE pins)

VEN = VMODE = 5.5 V

0.01

µA

Power switches

RDS(on)

P-channel MOSFET

on-resistance

300

400

mΩ

N-channel MOSFET

on-resistance

350

450

ILPEAK

P-channel peak current limit

Over the input voltage

range

900

1000

1200

ILKG-P

P-channel leakage current

VIN = 5.5 V, VEN= 0

µA

ILKG-N

N-channel leakage current

VSW = 5.5 V, VEN= 0

µA

Notes:

(1)

Not tested in production. This value is guaranteed by correlation with RDS(on), peak current limit and operating input voltage.

(2)

Not tested in production. This parameter is guaranteed by peak current limit.

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