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STGP30V60F Fiches technique(PDF) 5 Page - STMicroelectronics

No de pièce STGP30V60F
Description  Low thermal resistance
PDF  19 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGP30V60F Fiches technique(HTML) 5 Page - STMicroelectronics

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DocID025049 Rev 4
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STGB30V60F, STGP30V60F
Electrical characteristics
Table 5. Dynamic characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Cies
Input capacitance
VCE = 25 V, f = 1 MHz,
VGE = 0
-3750
-
pF
Coes
Output capacitance
-
120
-
pF
Cres
Reverse transfer
capacitance
-77
-
pF
Qg
Total gate charge
VCC = 480 V, IC = 30 A,
VGE = 15 V, see Figure 22
-163
-
nC
Qge
Gate-emitter charge
-
28
-
nC
Qgc
Gate-collector charge
-
72
-
nC
Table 6. IGBT switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VCE = 400 V, IC = 30 A,
RG = 10 Ω, VGE = 15 V,
see Figure 21
-45
-
ns
tr
Current rise time
-
16
-
ns
(di/dt)on
Turn-on current slope
-
1500
-
A/µs
td(off)
Turn-off delay time
-
189
-
ns
tf
Current fall time
-
19
-
ns
Eon
(1)
1.
Energy losses include reverse recovery of the external diode. The diode is the same of the copacked
STGW30V60DF.
Turn-on switching losses
-
383
-
µJ
Eoff
(2)
2.
Turn-off losses include also the tail of the collector current.
Turn-off switching losses
-
233
-
µJ
Ets
Total switching losses
-
616
-
µJ
td(on)
Turn-on delay time
VCE = 400 V, IC = 30 A,
RG = 10 Ω, VGE = 15 V,
TJ = 175 °C, see Figure 21
-42
-
ns
tr
Current rise time
-
17
-
ns
(di/dt)on
Turn-on current slope
-
1337
-
A/µs
td(off)
Turn-off delay time
-
193
-
ns
tf
Current fall time
-
32
-
ns
Eon
(1)
Turn-on switching losses
-
794
-
µJ
Eoff
(2)
Turn-off switching losses
-
378
-
µJ
Ets
Total switching losses
-
1172
-
µJ



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