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STGP30V60DF Fiches technique(PDF) 3 Page - STMicroelectronics

No de pièce STGP30V60DF
Description  Low thermal resistance
PDF  22 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGP30V60DF Fiches technique(HTML) 3 Page - STMicroelectronics

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DocID024361 Rev 4
3/22
STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF
Electrical characteristics
2
Electrical characteristics
T
J
= 25 °C unless otherwise specified.
Table 4. Static characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
(BR)CES
Collector-emitter
breakdown voltage
(V
GE
= 0)
I
C
= 2 mA
600
V
V
CE(sat)
Collector-emitter saturation
voltage
V
GE
= 15 V, I
C
= 30 A
1.85
2.3
V
V
GE
= 15 V, I
C
= 30 A
T
J
= 125 °C
2.15
V
GE
= 15 V, I
C
= 30 A
T
J
= 175 °C
2.35
V
F
Forward on-voltage
I
F
= 30 A
2
2.6
V
I
F
= 30 A, T
J
= 125 °C
1.7
V
I
F
= 30 A, T
J
= 175 °C
1.6
V
V
GE(th)
Gate threshold voltage
V
CE
= V
GE
, I
C
= 1 mA
5
6
7
V
I
CES
Collector cut-off current
(V
GE
= 0)
V
CE
= 600 V
25
μA
I
GES
Gate-emitter leakage
current (V
CE
= 0)
V
GE
= ± 20 V
250
nA
Table 5. Dynamic characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
C
ies
Input capacitance
V
CE
= 25 V, f = 1 MHz,
V
GE
= 0
-3750
-
pF
C
oes
Output capacitance
-
120
-
pF
C
res
Reverse transfer
capacitance
-77
-
pF
Q
g
Total gate charge
V
CC
= 480 V, I
C
= 30 A,
V
GE
= 15 V, see
Figure 29
-163
-
nC
Q
ge
Gate-emitter charge
-
28
-
nC
Q
gc
Gate-collector charge
-
72
-
nC



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