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STGP30V60DF Fiches technique(PDF) 2 Page - STMicroelectronics

No de pièce STGP30V60DF
Description  Low thermal resistance
PDF  22 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGP30V60DF Fiches technique(HTML) 2 Page - STMicroelectronics

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Electrical ratings
STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF
2/22
DocID024361 Rev 4
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
V
CES
Collector-emitter voltage (V
GE
= 0)
600
V
I
C
Continuous collector current at T
C
= 25 °C
60
A
I
C
Continuous collector current at T
C
= 100 °C
30
A
I
CP
(1)
1.
Pulse width limited by maximum junction temperature.
Pulsed collector current
120
A
V
GE
Gate-emitter voltage
±20
V
I
F
Continuous forward current at T
C
= 25 °C
60
A
I
F
Continuous forward current at T
C
= 100 °C
30
A
I
FP
(1)
Pulsed forward current
120
A
P
TOT
Total dissipation at T
C
= 25 °C
258
W
T
STG
Storage temperature range
- 55 to 150
°C
T
J
Operating junction temperature
- 55 to 175
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
R
thJC
Thermal resistance junction-case IGBT
0.58
°C/W
R
thJC
Thermal resistance junction-case diode
2.08
°C/W
R
thJA
Thermal resistance junction-ambient
50
°C/W



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