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STGP30H60DFB Fiches technique(PDF) 8 Page - STMicroelectronics |
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STGP30H60DFB Fiches technique(HTML) 8 Page - STMicroelectronics |
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8 / 21 page ![]() Electrical characteristics STGB30H60DFB, STGP30H60DFB 8/21 DocID026677 Rev 2 Figure 14. Capacitance variation Figure 15. Gate charge vs. gate-emitter voltage C 10 VCE(V) (pF) 0.1 1 10 Cies 100 1000 Coes Cres 100 GIPG090720141358FSR VGE (V) 4 2 0 0 Qg(nC) 40 80 120 160 6 8 10 12 14 VCC= 520V, IC= 30A IG= 1mA 16 GIPG280120141455FSR Figure 16. Switching loss vs collector current Figure 17. Switching loss vs gate resistance E 0 IC(A) (μJ) 010 20 400 30 40 800 EON 1200 VCC = 400V, VGE = 15V, RG = 10Ω, TJ = 175°C 50 EOFF 1600 60 GIPG090720141414FSR E 20 RG(Ω) (μJ) 310 17 220 420 620 24 31 820 EOFF VCC = 400 V, VGE = 15 V, IC = 30 A, TJ = 175 °C EON 38 1020 1220 1420 GIPG090720141421FSR Figure 18. Switching loss vs temperature Figure 19. Switching loss vs collector-emitter voltage E 0 TJ(°C) (μJ) 20 60 200 400 600 100 140 EOFF VCC= 400V, VGE= 15V, RG= 10Ω, IC= 30A EON 800 GIPG090720141431FSR E 0 VCE(V) (μJ) 150 400 800 1200 EOFF TJ= 175°C, VGE= 15V, RG= 10Ω, IC= 30A 1600 EON 250 350 450 GIPG090720141440FSR |
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