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STGP30H60DFB Fiches technique(PDF) 7 Page - STMicroelectronics

No de pièce STGP30H60DFB
Description  Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
PDF  21 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGP30H60DFB Fiches technique(HTML) 7 Page - STMicroelectronics

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STGB30H60DFB, STGP30H60DFB
Electrical characteristics
Figure 8. Collector current vs. switching
frequency
Figure 9. Forward bias safe operating area
0
10
20
30
40
110
Ic [A]
f [kHz]
G
Ω
rectangular current shape,
(duty cycle=0.5, V
CC = 400V, R = 10
,
V
GE = 0/15 V, TJ =175°C)
Tc=80°C
Tc=100 °C
50
60
GIPG280120141713FSR
IC
100
10
1
0.1
1
VCE(V)
(A)
10
100
10 μs
100 μs
1 ms
(single pulse T
C = 25°C,
TJ ≤ 175 °C; VGE=15V)
Vce(sat) limit
GIPG090720141330FSR
Figure 10. Transfer characteristics
Figure 11. Diode VF vs. forward current
IC
60
40
20
0
7
11
VGE(V)
(A)
913
80
100
VCE =10 V
Tj= 25 °C
Tj= 175 °C
GIPG280120141330FSR
VF
2
1.6
1.2
0.8
10
IF(A)
(V)
20
TJ= 175°C
30
40
50
TJ= 25°C
TJ= -40°C
60
2.8
2.4
GIPG090720141349FSR
Figure 12. Normalized VGE(th) vs junction
temperature
Figure 13. Normalized V(BR)CES vs. junction
temperature
VGE(th)
(norm)
0.8
0.7
0.6
-50
TJ(°C)
0
50
100
150
0.9
1.0
VCE= VGE
IC= 1mA
AM16060v1
V(BR)CES
(norm)
1.1
1.0
0.9
-50
TJ(°C)
0
50
100
150
IC= 2mA
AM16059v2



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