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STGP30H60DF Fiches technique(PDF) 9 Page - STMicroelectronics

No de pièce STGP30H60DF
Description  600 V, 30 A high speed trench gate field-stop IGBT
PDF  24 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGP30H60DF Fiches technique(HTML) 9 Page - STMicroelectronics

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DocID022363 Rev 3
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STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF
Electrical characteristics
Figure 14. Forward bias safe operating area for
TO-220, D²PAK and TO-247
Figure 15. Thermal impedance for TO-220,
D²PAK and TO-247
Figure 16. Forward bias safe operating area for
TO-220FP
Figure 17. Thermal impedance for TO-220FP
Figure 18. Gate charge vs. gate-emitter voltage
Figure 19. Capacitance variations vs. VCE
IC
100
10
1
1
100
VCE(V)
10
(A)
(single pulse TC=25°C,
TJ<175°C, VGE=15V)
1µs
100µs
1ms
AM17370v1
10
-5
10
-4
10
-3
10
-2
10
-1
tp(s)
10
-2
10
-1
K
δ0
δ0.01
δ0.02
δ0.05
δ0.1
δ0.2
δ0.5
Zth=k Rthj-c
δ=tp/t
tp
t
ZthTO2T_B
IC
100
10
1
1
100
VCE(V)
10
(A)
(single pulse TC=25°C,
TJ<175°C, VGE=15V)
1µs
100µs
1ms
AM17371v1
10
-5
10
-4
10
-3
10
-2
10
-1
tp(s)
10
-2
10
-1
K
10
-3
δ0
δ0.01
δ0.02
δ0.05
δ0.1
δ0.2
δ0.05
Zth=k Rthj-c
δ=tp/t
tp
t
10
0
ZthTO2T_B_FP
VGE
8
6
4
2
0
Qg(nC)
100
(V)
50
10
VCC= 400V, IC=30A
12
14
16
0
AM17372v1
C
1000
100
0.1
VCE(V)
10
(pF)
1
10
Cies
Coes
Cres
AM17373v1



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