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2SD583 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

No de pièce 2SD583
Description  isc Silicon NPN Power Transistors
PDF  2 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD583 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistors
2SD583
DESCRIPTION
·
High Current Capability
·
Excellent Safe Operating Area
·
High DC current Gain
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for high power audio, disk head positioners
and other linear applications
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
250
V
VCEO
Collector-Emitter Voltage
250
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
15
A
ICM
Collector Current-Peak
25
A
IB
Base Current-Continuous
5
A
PD
Total Power Dissipation @TC=25℃
150
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150
℃


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