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2SD583 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD583 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistors 2SD583 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 250 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8A; IB= 0.8A 1.4 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 15A; IB= 3A 4.0 V VBE(on) Base-Emitter On Voltage IC= 8A ; VCE= 4V 2.2 V ICEO Collector Cutoff Current VCE= 250V; IB= 0 0.5 mA ICBO Collector Cutoff Current VCB= 250V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 5V; IC=0 0.1 mA hFE-1 DC Current Gain IC= 2A ; VCE= 5V 60 200 hFE-2 DC Current Gain IC= 8A ; VCE= 5V 30 fT Current-Gain—Bandwidth Product IC= 1A ; VCE= 10V; ftest= 1.0MHz 4 MHz |
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