STM32F318C8 datasheet(73/125 Pages) STMICROELECTRONICS

No de pièce	STM32F318C8

Description	ARM-based Cortex-M4 32-bit MCUFPU, 64 KB Flash, 16 KB SRAM, ADC, DAC, 3 COMP, Op-Amp, 1.8 V

PDF	125 Pages

Scroll/Zoom	100%

Fabricant	STMICROELECTRONICS [STMicroelectronics]

Site Internet	http://www.st.com

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73 / 125 page

DocID026294 Rev 5

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STM32F318C8 STM32F318K8

Electrical characteristics

107

6.3.7

Internal clock source characteristics

The parameters given in Table 38 are derived from tests performed under ambient

temperature and supply voltage conditions summarized in Table 20.

High-speed internal (HSI) RC oscillator

Figure 17. HSI oscillator accuracy characterization results for soldered parts

Table 38. HSI oscillator characteristics(1)

1. VDDA = 3.3 V, TA = –40 to 105 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fHSI

Frequency

MHz

TRIM

HSI user trimming step

1(2)

2. Guaranteed by design, not tested in production.

DuCy(HSI)

Duty cycle

45(2)

-55(2)

ACCHSI

Accuracy of the HSI oscillator

TA = -40 to

105°C

-2.8(3)

3. Data based on characterization results, not tested in production.

-3.8(3)

TA = -10 to 85°C -1.9(3)

-2.3(3)

TA = 0 to 85°C

-1.9(3)

-2(3)

TA = 0 to 70°C

-1.3(3)

-2(3)

TA = 0 to 55°C

-1(3)

-2(3)

TA = 25°C(4)

4. Factory calibrated, parts not soldered.

-1

tsu(HSI)

HSI oscillator startup time

1(2)

-2(2)

µs

IDDA(HSI)

HSI oscillator power

consumption

100(2)

µA

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