 |
Moteur de recherche de fiches techniques de composants électroniques |
|
|
Moteur de recherche de fiches techniques de composants électroniques |
|
2SB538 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
2SB538 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited |
|
|
1 / 2 page  INCHANGE Semiconductor isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistor 2SB538 DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -65V(Min) · Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Max.) @IC= -10A · Wide area of safe operation · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -65 V VCEO Collector-Emitter Voltage -65 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous -15 A PC Collector Power Dissipation @Tc=25℃ 75 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ |
Numéro de pièce similaire - 2SB538 |
|
Description similaire - 2SB538 |
|
|
|
Lien URL |
| ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Lien vers la fiche technique | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
French ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
