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2SB538 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB538 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistor 2SB538 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA; IB= 0 -65 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 -5 V V(BR)CBO Collector-Base breakdown voltage IC=-1mA; IE= 0 -65 V VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -1A -2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -10A; IB= -1A -2.5 V ICBO Collector Cutoff Current VCB= -65V; IE= 0 -100 μ A ICEO Collector Cutoff Current VCE= -65V; IB= 0 -100 μ A IEBO Emitter Cutoff Current VEB= -7V; IC= 0 -10 μ A hFE -1 DC Current Gain IC= -2A; VCE= -5V 40 140 hFE -2 DC Current Gain IC= -10A; VCE= -5V 20 fT Current-Gain—Bandwidth Product IC=-0.5A ; VCE= -10V 15 MHz |
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