2SA779 datasheet(1/2 Pages) ISC

No de pièce	2SA779

Description	isc Silicon PNP Power Transistor

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Fabricant	ISC [Inchange Semiconductor Company Limited]

Site Internet	http://www.iscsemi.cn

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INCHANGE Semiconductor

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isc Silicon PNP Power Transistor

2SA779

DESCRIPTION

·

DC Current Gain-

: hFE= 40(Min)@ IC= -0.15A

·

Collector-Emitter Sustaining Voltage -

: VCEO(SUS)= -35V(Min)

APPLICATIONS

·

Designed for use as audio amplifiers and drivers utilizing

complementary or quasi complementary circuits.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-35

V

VCEO

Collector-Emitter Voltage

-35

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-1.5

A

IB

Base Current-Continuous

-0.5

A

PC

Collector Power Dissipation

@ Ta=25℃

1.0

W

Collector Power Dissipation

@ TC=25℃

10

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

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