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2SA779 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA779 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistor 2SA779 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA ; IB=0 -35 V VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA -0.5 V VBE(on) Base-Emitter On Voltage IC= -0.5A; VCE= -2V -1.0 V ICBO Collector Cutoff Current VCB= -35V; IE= 0 VCB= -35V; IE= 0,TC=125℃ -0.1 -10 μ A IEBO Emitter Cutoff Current VEB= -5V; IC=0 -10 μ A hFE-1 DC Current Gain IC= -5mA ; VCE= -2V 25 hFE-2 DC Current Gain IC= -0.5A ; VCE= -2V 25 hFE-3 DC Current Gain IC= -0.15A ; VCE= -2V 40 250 |
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