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2SD2161 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD2161 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Darlington Power Transistor 2SD2161 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 2mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 2mA 2.0 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 1.0 μ A hFE-1 DC Current Gain IC= 2A; VCE= 2V 2000 8000 20000 hFE-2 DC Current Gain IC= 4A; VCE= 2V 500 fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= -5V 30 MHz COB Output Capacitance IE= 0; VCB= -10V; ftest= 1MHz 35 pF Switching Times ton Turn-on Time IC=2A, IB1= IB2= 2mA, VCC≈ -50V; RL= 25Ω 1.0 μ s tstg Storage Time 3.5 μ s tf Fall Time 1.2 μ s hFE-1 Classifications M L K 2000-5000 4000-10000 8000-20000 |
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