MJB42C datasheet(1/2 Pages) ISC

No de pièce	MJB42C

Description	isc Silicon PNP Power Transistor

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Fabricant	ISC [Inchange Semiconductor Company Limited]

Site Internet	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc website：www.iscsemi.com

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isc Silicon PNP Power Transistor

MJB42C

DESCRIPTION

·

Lead formed for surface mount applications(NO suffix)

·

Electrically the same as TIP42 series

·

Pb-free package are available

·

100% avalanche tested

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

General purpose amplifier and switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-100

V

VCEO

Collector-Emitter Voltage

-100

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-6

A

ICP

Collector Current-Pulse

-10

A

IB

Base Current

-2

A

PC

Total Power Dissipation

@ Ta=25℃

2

W

PC

Total Power Dissipation

@ TC=25℃

65

W

TJ

Junction Temperature

-65~150

℃

Tstg

Storage Temperature Range

-65~150

℃

Numéro de pièce similaire - MJB42C

Fabricant	No de pièce	Fiches technique	Description
ON Semiconductor	MJB42C	123Kb / 8P	Complementary Silicon Plastic Power Transistors March, 2001 ??Rev. 0
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Inchange Semiconductor ...	MJB42C	313Kb / 2P	isc Silicon PNP Power Transistor
ON Semiconductor	MJB42CG	90Kb / 6P	Complementary Silicon Plastic Power Transistors December, 2005 ??Rev. 1

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