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MJB42C Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited |
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MJB42C Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistor MJB42C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)CEO * Collector-Emitter Breakdown Voltage IC=- 30mA; IB= 0 -100 V VCE(sat)* Collector-Emitter Saturation Voltage IC=-6A; IB= -600mA -1.5 V VBE(on)* Base-Emitter On Voltage IC=- 6A; VCE=-4V -2.0 V ICEO Collector Cutoff Current VCE=-60V; IE= 0 -0.7 mA IEBO Emitter Cutoff Current VEB=-5V; IC= 0 -50 uA hFE1* DC Current Gain IC= -0.3A; VCE= -4 V 30 hFE2* DC Current Gain IC=- 3A; VCE= -4 V 15 75 fT Current-Gain—Bandwidth Product IC= -0.5A; VCE= -10V 3 MHz *:Pulse test PW≤300us,duty cycle≤2% |
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