TIP2955T datasheet(1/2 Pages) ISC

No de pièce	TIP2955T

Description	isc Silicon PNP Power Transistor

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Fabricant	ISC [Inchange Semiconductor Company Limited]

Site Internet	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.com

isc & iscsemi is registered trademark

1

isc Silicon PNP Power Transistor

TIP2955T

DESCRIPTION

·

Excellent Safe Operating Area

·

DC Current Gain-

: hFE=20-70@IC = 4A

·

Collector-Emitter Saturation Voltage-

: VCE(sat)= 0.8V(Max)@ IC = 4A

·

Complement to Type TIP2955T

APPLICATIONS

·

Designed for general-purpose switching and amplifier

applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-70

V

VCEO

Collector-Emitter Voltage

-60

V

VEBO

Emitter-base Voltage

-5

V

IC

Collector Current-Continuous

-10

A

IC

Collector Current-Peak

-12

A

IB

Base Current

-4

A

PC

Collector Power Dissipation@TC=25℃

75

W

Tj

Junction Tmperature

150

℃

Tstg

Storage Temperature Range

-65~175

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.67

℃

/W

Rth j-a

Thermal Resistance,Junction to Ambient

70

℃

/W

Numéro de pièce similaire - TIP2955T

Fabricant	No de pièce	Fiches technique	Description
Mospec Semiconductor	TIP2955	107Kb / 3P	POWER TRANSISTORS(15A,60V,90W)
Motorola, Inc	TIP2955	104Kb / 4P	POWER TRANSISTORS COMPLEMENTARY SILICON
ON Semiconductor	TIP2955	101Kb / 4P	POWER TRANSISTORS COMPLEMENTARY SILICON 1996 REV 1
Power Innovations Ltd	TIP2955	95Kb / 6P	PNP SILICON POWER TRANSISTOR
STMicroelectronics	TIP2955	45Kb / 4P	COMPLEMENTARY SILICON POWER TRANSISTORS Aug-1999

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