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TIP2955T Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited

No de pièce TIP2955T
Description  isc Silicon PNP Power Transistor
PDF  2 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

TIP2955T Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
2
isc Silicon PNP Power Transistors
TIP2955T
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= -30mA ;IB= 0
-60
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= -4A; IB= -0.4A
-0.8
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= -10A; IB= -3.3A
-4.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= -4A; IB= -0.4A
-1.8
V
VBE(on)
Base-Emitter On Voltage
IC= -4A; VCE= -4V
-1.8
V
ICEO
Collector Cutoff Current
VCE= -30V; IB=0
-0.2
mA
ICBO
Collector Cutoff Current
VCB= -70V; IE=0;
VCB= -70V; IE=0; Tj= 150℃
-0.1
-1.0
mA
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-0.5
mA
hFE-1
DC Current Gain
IC= -4A; VCE= -4V
20
70
hFE-2
DC Current Gain
IC= -10A; VCE= -4V
5
fT
Current-Gain—Bandwidth Product
IC=- 0.5A ; VCE= -10V
2
MHz
Switching Times
ton
Turn-On Time
IC= 2A; IB1= -IB2= 0.2A
1.0
μ
s
tf
Turn-Off Time
4.0
μ
s



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