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LP5910 Fiches technique(PDF) 15 Page - Texas Instruments

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No de pièce LP5910
Description  LP5910 300-mA Ultra-Low-Noise LDO for RF and Analog Circuits - Requires No Bypass Capacitor
PDF  29 Pages
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Fabricant  TI1 [Texas Instruments]
Site Internet  http://www.ti.com
Logo TI1 - Texas Instruments

LP5910 Fiches technique(HTML) 15 Page - Texas Instruments

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LP5910
www.ti.com
SNVSA91C – SEPTEMBER 2015 – REVISED JUNE 2016
Product Folder Links: LP5910
Submit Documentation Feedback
Copyright © 2015–2016, Texas Instruments Incorporated
As a good design practice, keep the wiring parasitic inductance at a minimum, using as wide as possible traces
from the LDO output to the capacitors, keeping the LDO output trace layer as close as possible to ground layer
and avoiding vias on the path. If there is a need to use vias, implement as many vias as possible between the
connection layers. It is recommended to keep parasitic wiring inductance less than 35 nH. For the applications
with fast load transients, an input capacitor is recommended, equal to or larger to the sum of the capacitance at
the output node, for the best load-transient performance.
8.2.2.6 No-Load Stability
The LP5910 remains stable, and in regulation, with no external load.
8.2.2.7 Enable Control
The LP5910 may be switched to an ON or OFF state by a logic input at the EN pin. A voltage on this pin greater
than VIH turns the device on, while a voltage less than VIL turns the device off.
When the EN pin is low, the regulator output is off and the device typically consumes less than 1 µA.
Additionally, an output pulldown circuit is activated which ensures that any charge stored on COUT is discharged
to ground.
If the application does not require the use of the shutdown feature, the EN pin can be tied directly to the IN pin to
keep the regulator output permanently on.
An internal 1-MΩ pulldown resistor ties the EN input to ground, ensuring that the device remains off if the EN pin
is left open circuit. To ensure proper operation, the signal source used to drive the EN pin must be able to swing
above and below the specified turn-on/off voltage thresholds listed in the Electrical Characteristics under VIL and
VIH.
Table 2. Recommended Output Capacitor Specification
PARAMETER
TEST CONDITIONS
MIN
NOM
MAX
UNIT
Output capacitor, COUT
Capacitance for stability
0.7
1
10
µF
ESR
5
500
8.2.2.8 Power Dissipation
Knowing the device power dissipation and proper sizing of the thermal plane connected to the tab or pad is
critical to ensuring reliable operation. Device power dissipation depends on input voltage, output voltage, and
load conditions and can be calculated with Equation 1.
PD(MAX) = (VIN(MAX) – VOUT) × IOUT(MAX)
(1)
Power dissipation can be minimized, and greater efficiency can be achieved, by using the lowest available
voltage drop option that would still be greater than the dropout voltage (VDO). However, keep in mind that higher
voltage drops result in better dynamic (that is, PSRR and transient) performance.
On the WSON (DRV) package, the primary conduction path for heat is through the exposed power pad to the
PCB. To ensure the device does not overheat, connect the exposed pad, through thermal vias, to an internal
ground plane with an appropriate amount of copper PCB area .
On the DSBGA (YKA) package, the primary conduction path for heat is through the four bumps to the PCB.
The maximum allowable junction temperature (TJ(MAX)) determines maximum power dissipation allowed (PD(MAX))
for the device package.
Power dissipation and junction temperature are most often related by the junction-to-ambient thermal resistance
(RθJA) of the combined PCB and device package and the temperature of the ambient air (TA), according to
Equation 2 or Equation 3:
TJ(MAX) = TA(MAX) + (RθJA × PD(MAX))
(2)
PD(MAX) = (TJ(MAX) - TA(MAX)) / RθJA
(3)



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