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DF2S6.8UFS Fiches technique(PDF) 3 Page - Toshiba Semiconductor |
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DF2S6.8UFS Fiches technique(HTML) 3 Page - Toshiba Semiconductor |
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3 / 7 page ![]() DF2S6.8UFS 3 5. 5. 5. 5. Guaranteed ESD Protection (Note) Guaranteed ESD Protection (Note) Guaranteed ESD Protection (Note) Guaranteed ESD Protection (Note) Test Condition IEC61000-4-2 (Contact discharge) ESD Protection ±8 kV Note: Criterion: No damage to devices. 6. 6. 6. 6. Marking Marking Marking Marking Fig. Fig. Fig. Fig. 6.1 6.1 6.1 6.1 Marking Marking Marking Marking 7. 7. 7. 7. Land Pattern Dimensions (for reference only) Land Pattern Dimensions (for reference only) Land Pattern Dimensions (for reference only) Land Pattern Dimensions (for reference only) Fig. Fig. Fig. Fig. 7.1 7.1 7.1 7.1 SOD-923 (unit: mm) SOD-923 (unit: mm) SOD-923 (unit: mm) SOD-923 (unit: mm) Fig. Fig. Fig. Fig. 7.2 7.2 7.2 7.2 fSC (unit: mm) fSC (unit: mm) fSC (unit: mm) fSC (unit: mm) 2014-07-23 Rev.5.0 |
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