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DF2S6.8UFS Fiches technique(PDF) 1 Page - Toshiba Semiconductor |
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DF2S6.8UFS Fiches technique(HTML) 1 Page - Toshiba Semiconductor |
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1 / 7 page ![]() DF2S6.8UFS 1 ESD Protection Diodes Silicon Epitaxial Planar DF2S6.8UFS DF2S6.8UFS DF2S6.8UFS DF2S6.8UFS Start of commercial production 2007-01 1. 1. 1. 1. Applications Applications Applications Applications • ESD Protection Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation. 2. 2. 2. 2. Packaging and Internal Circuit Packaging and Internal Circuit Packaging and Internal Circuit Packaging and Internal Circuit SOD-923 1: Cathode 2: Anode fSC 1: Cathode 2: Anode The SOD-923 package is recommended. Package SOD-923 fSC Product name DF2S6.8UFS,L3M (Note 1) DF2S6.8UFS,L3J , DF2S6.8UFS,L3F Note 1: The product name of the devices housed in the SOD-923 package are suffixed with the "M". 2014-07-23 Rev.5.0 |
Numéro de pièce similaire - DF2S6.8UFS |
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