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ISC6053AM1 Fiches technique(PDF) 2 Page - Isahaya Electronics Corporation

No de pièce ISC6053AM1
Description  FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
PDF  4 Pages
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Fabricant  ISAHAYA [Isahaya Electronics Corporation]
Site Internet  http://www.idc-com.co.jp
Logo ISAHAYA - Isahaya Electronics Corporation

ISC6053AM1 Fiches technique(HTML) 2 Page - Isahaya Electronics Corporation

  ISC6053AM1 Datasheet HTML 1Page - Isahaya Electronics Corporation ISC6053AM1 Datasheet HTML 2Page - Isahaya Electronics Corporation ISC6053AM1 Datasheet HTML 3Page - Isahaya Electronics Corporation ISC6053AM1 Datasheet HTML 4Page - Isahaya Electronics Corporation  
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ISC6053AM1
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION
SILICON NPN EPITAXIAL TYPE
TYPICAL CHARACTERISTICS
0
50
100
150
200
250
300
0
50
100
150
AMBIENT TEMPERATURE Ta(℃)
COLLECTOR DISSIPATION VS. AMBIENT TEMPERATURE
10
100
1000
10000
1
10
100
1000
COLLECTOR CURRENT IC (mA)
DC FORWARD CURRENT GAIN VS.
COLLECTOR CURRENT
VCE=4V
85℃
25℃
-40℃
0
100
200
300
400
500
600
700
0
0.2
0.4
0.6
0.8
1
1.2
BASE TO EMITTER VOLTAGE VBE (V)
COMMON EMITTER TRANSFER(1)
VCE=4V
85℃
25℃
-40℃
0
2
4
6
8
10
00.2
0.4
0.6
0.811.2
BASE TO EMITTER VOLTAGE VBE (V)
COMMON EMITTER TRANSFER(2)
VCE=4V
85℃
25℃
-40℃
0
100
200
300
400
500
600
700
800
012
345
COLLECTOR TO EMITTER VOLTAGE VCE(V)
COMMON EMITTER OUTPUT(1)
IB=0mA
IB=1mA
IB=2mA
IB=3mA
IB=4mA
IB=5mA
IB=6mA
IB=7mA
IB=8mA
IB=9mA
IB=10mA
Ta=25℃
0
50
100
150
200
250
300
350
400
0
5
10
15
20
COLLECTOR TO EMITTER VOLTAGE VCE(V)
COMMON EMITTER OUTPUT(2)
IB=0mA
IB=0.1mA
IB=0.2mA
IB=0.3mA
IB=0.4mA
IB=0.5mA
IB=0.6mA
IB=0.7mA
IB=0.8mA
IB=1.0mA
IB=0.9mA
Ta=25℃



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