ISC6053AM1 datasheet(1/4 Pages) ISAHAYA

No de pièce	ISC6053AM1

Description	FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE

PDF	4 Pages

Scroll/Zoom	100%

Fabricant	ISAHAYA [Isahaya Electronics Corporation]

Site Internet	http://www.idc-com.co.jp

Logo

1 / 4 page

ISC6053AM1

FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION

SILICON NPN EPITAXIAL TYPE

DESCRIPTION

ISC6053AM1 is a silicon NPN epitaxial type transistor

Designed with high collector current, low V

CE(sat).

FEATURE

●High collector current

I

C（MAX）=650mA

●Low collector to emitter saturation voltage

V

CE（sat）<0.5Vmax

APPLICATION

For switching application, small type motor drive application.

MAXIMUM RATINGS（Ta=25℃）

Symbol

Parameter

Ratings

Unit

V

CEO

Collector to Emitter voltage

20

V

CBO

Collector to Base voltage

25

V

EBO

Emitter to Base voltage

4

V

I

C

Collector current

650

mA

P

C

Collector dissipation

200

mW

T

j

Junction temperature

150

℃

T

stg

Storage temperature

-55～150

℃

ELECTRICAL CHARACTERISTICS（Ta=25℃）

Symbol

Parameter

Test condition

Limits

Unit

Min

Typ

Max

V

（BR）CEO

C to E break down voltage

IC=100uA, IB=0

20

V

（BR）CBO

C to B break down voltage

IC=10uA, IE=0

25

V

（BR）EBO

E to B break down voltage

IE=10uA, IC=0

4

V

I

CBO

Collector cut off current

VCB=25V, IE=0

1

uA

I

EBO

Emitter cut off current

VEB=2V, IC=0

1

uA

h

FE※

DC forward current gain

VCE=4V,IC=100mA

150

800

-

V

CE（sat）

C to E saturation voltage

IC=500mA, IB=25mA

0.3

0.5

V

f

T

Gain band width product

VCE=6V,IE=-10mA,

290

MHz

*：It shows hFE classification in below table.

OUTLINE DRAWING

Unit：mm

TERMINAL CONNECTOR

①：BASE

②：EMITTER

③：COLLECTOR

JEITA：SC-70

JEDEC：－

MARKING

1.25

0.425

2.1

①

②

③

0.425

B

・

G

Type Name

hFE ITEM

ITEM

E

F

G

hFE

150～300

250～500

400～800

Numéro de pièce similaire - ISC6053AM1

Fabricant	No de pièce	Fiches technique	Description
Isahaya Electronics Cor...	ISC6053AU1	197Kb / 4P	FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE

More results

Description similaire - ISC6053AM1

Fabricant	No de pièce	Fiches technique	Description
Isahaya Electronics Cor...	2SA2166	148Kb / 4P	FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE
	2SC6046	69Kb / 4P	GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
	2SC3441	131Kb / 3P	FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
	2SC6046	114Kb / 4P	FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
	2SC6120	111Kb / 4P	FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
	INC1001AC1	115Kb / 2P	FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
	ISC3581AS1	157Kb / 3P	FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
	ISC6046AU1	132Kb / 4P	FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
	ISC6053AU1	197Kb / 4P	FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
	RT3C77M	129Kb / 2P	Composite Transistor For General Purpose High Current Drive Application Silicon NPN Epitaxial Type

More results

ISC6053AM1 Fiches technique(PDF) 1 Page - Isahaya Electronics Corporation

ISC6053AM1 Fiches technique(HTML) 1 Page - Isahaya Electronics Corporation

Numéro de pièce similaire - ISC6053AM1

Description similaire - ISC6053AM1

Html Pages

1 2 3 4

Fiches technique Télécharger

Lien URL