STM32F401CB datasheet(69/134 Pages) STMICROELECTRONICS

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STM32F401xB STM32F401xC

Electrical characteristics

113

Figure 21. Typical VBAT current consumption (LSE and RTC ON)

Table 30. Typical and maximum current consumption in Standby mode - VDD=3.3 V

Symbol

Parameter

Conditions

Typ(1)

Max(2)

Unit

TA =

25 °C

TA =

25 °C

TA =

85 °C

TA =

105 °C

IDD_STBY

Supply current in

Standby mode

Low-speed oscillator (LSE) and RTC ON

2.8

5.0

14.0

28.0

µA

RTC and LSE OFF

2.1

4.0(3)

13.0

27.0(3)

1. When the PDR is OFF (internal reset is OFF), the typical current consumption is reduced by 1.2 µA.

2. Guaranteed by characterization, unless otherwise specified.

3. Guaranteed by test in production.

Table 31. Typical and maximum current consumptions in VBAT mode

Symbol

Parameter

Conditions(1)

Typ

Max(2)

Unit

TA = 25 °C

TA =

85 °C

TA =

105 °C

VBAT =

1.7 V

VBAT=

2.4 V

VBAT =

3.3 V

VBAT = 3.6 V

IDD_VBAT

Backup

domain supply

current

Low-speed oscillator (LSE) and RTC ON

0.66

0.76

0.97

3.0

5.0

µA

RTC and LSE OFF

0.1

2.0

4.0

1. Crystal used: Abracon ABS07-120-32.768 kHz-T with a CL of 6 pF for typical values.

2. Guaranteed by characterization.

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