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TIP32CG-TN3-R Fiches technique(PDF) 2 Page - Unisonic Technologies |
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TIP32CG-TN3-R Fiches technique(HTML) 2 Page - Unisonic Technologies |
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2 / 3 page ![]() TIP32C PNP SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R209-017,D ABSOLUATE MAXIUM RATINGS (TA=25°C) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -100 V Emitter-Base Voltage VEBO -5 V Collector Current DC IC -3 A PULSE ICM -5 A Base Current IB -1 A Power Dissipation TO-220 PD 2 W TO-126S/TO-126 1.25 W TO-252 1 W Junction Temperature TJ +150 °C Storage Temperature TSTG -40 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector Emitter Sustaining Voltage (Note) BVCEO IC=-30mA,IB=0 -100 V Collector Cutoff Current ICES VCE=-100V, VBE=0 -200 μA Collector Cutoff Current ICEO VCE=-60V, IB=0 -0.3 mA Emitter Cutoff current IEBO VBE=-5V, IC=0 -1 mA Collector-Emitter Saturation Voltage (Note) VCE(SAT) IC=-3A, IB=-375mA -1.2 V Base-Emitter On Voltage* VBE(ON) IC=-3A, VCE=-4A -1.8 V DC Current Gain (Note) hFE IC=-1A, VCE=-4V 25 IC=-3A, VCE=-4V 10 50 Current Gain Bandwidth Product fT IC=-0.5A,VCE=-10V, f=1MHz 3 MHz Note: Pulse Test: PW≤300μs, Duty Cyle≤2% |
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