AN1506 datasheet(13/14 Pages) STMICROELECTRONICS

13 / 14 page

AN1506 - APPLICATION NOTE

13/14

REFERENCES:

[1] B. J. Baliga,

Power Semiconductor Devices, PWS Publishing Company, Boston, MA, 1995.

[2] F. Di Giovanni, A. Magri, ”STripFET, innovative low voltage power MOSFETs,” Proceedings

of the

Power Conversion Intelligent Motion Conference, June 1998, Nuremberg, Germany

[3] N. Mohan, T. M. Undeland, W. P. Robbins,

Power Electronics: Converters, Applications, and Design,

Second edition, John Wiley & Sons, New York, 1995.

[4] A. Di Napoli, F. Caricchi, F. Crescimbini, G. Noia, “Design Criteria of a Low-Speed Axial-Flux PM

Synchronous Machine,” International Conference on Evolution and Modern Aspects of Synchronous

Machines, Zurich, August 25-27, 1991, pp.834-839.

[5] M. H. Rashid,

Power Electronics, Circuits, Devices, and Applications, Second edition, Prentice Hall,

Inc., Englewood Cliffs, New Jersey, 1993.

[6] G. T. Galyon, J. Cardinal. P. J. Singh, J. Newcomer, W. Lorenz, K. Chu, “Static and dynamic testing of

power MOSFETs,”

Sixteenth Annual IEEE Applied Power Electronics Conference and Exposition,

Anaheim, USA, March 2001, pp. 230-237.

[7] A. Fiel, T. Wu, “MOSFETs failure modes in the zero-voltage-switched full-bridge switching mode

power supply applications,”

Sixteenth Annual IEEE Applied Power Electronics Conference and

Exposition, Anaheim, USA, March 2001, pp. 1247-1252.

[8] J. J. Huselstein, C. Gauthier, C. Glaize, “Use of the MOSFET channel reverse conduction in an

inverter for suppression of the integral diode recovery current,“

Record of the European Power

Electronics Conference, Brighton, United Kingdom, September 1993, pp. 431-436.

[9] M. Peppel, B. Weis, “Optimized reverse diode operation of power MOSFETs,”

Conference Record of

the 2000 IEEE Industry Applications Conference, Roma, Italy, October 2000, pp. 2961-2965.

AN1506 Fiches technique(PDF) 13 Page - STMicroelectronics