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2SC5013 Fiches technique(PDF) 3 Page - California Eastern Labs

No de pièce 2SC5013
Description  NPN EPITAXIAL SILICON RF TRANSISTOR
PDF  6 Pages
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Fabricant  CEL [California Eastern Labs]
Site Internet  http://www.cel.com
Logo CEL - California Eastern Labs

2SC5013 Fiches technique(HTML) 3 Page - California Eastern Labs

  2SC5013 Datasheet HTML 1Page - California Eastern Labs 2SC5013 Datasheet HTML 2Page - California Eastern Labs 2SC5013 Datasheet HTML 3Page - California Eastern Labs 2SC5013 Datasheet HTML 4Page - California Eastern Labs 2SC5013 Datasheet HTML 5Page - California Eastern Labs 2SC5013 Datasheet HTML 6Page - California Eastern Labs  
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Data Sheet PU10518EJ01V0DS
3
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
Collector to Emitter Voltage VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Collector Current IC (mA)
COLLECTOR CURRENT
DC CURRENT GAIN vs.
Collector Current IC (mA)
vs. COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT
250
200
150
100
50
0
25
50
75
100
125
150
Ambient Temperature TA (˚C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Free Air
Collector to Base Voltage VCB (V)
vs. COLLECTOR TO BASE VOLTAGE
REVERSE TRANSFER CAPACITANCE
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
2.0
1.0
1
0.5
0.1
0.2
5
10
20
50
f = 1 MHz
2
50
0.5
1.0
0
40
30
20
10
VCE = 6 V
30
20
10
2
1
8
2
0
4
6
10
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
160
140
120
100
80
60
40
20
IB =
200
180
500
200
1
100
10
20
50
0
5
5
VCE = 6 V
2
10
20
12
10
1
8
0
2
6
5
10
50
VCE = 6 V
f = 1 GHz
0
2
2
4
Remark The graphs indicate nominal characteristics.
NE68018 / 2SC5013



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