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2SC5013 Fiches technique(PDF) 2 Page - California Eastern Labs

No de pièce 2SC5013
Description  NPN EPITAXIAL SILICON RF TRANSISTOR
PDF  6 Pages
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Fabricant  CEL [California Eastern Labs]
Site Internet  http://www.cel.com
Logo CEL - California Eastern Labs

2SC5013 Fiches technique(HTML) 2 Page - California Eastern Labs

  2SC5013 Datasheet HTML 1Page - California Eastern Labs 2SC5013 Datasheet HTML 2Page - California Eastern Labs 2SC5013 Datasheet HTML 3Page - California Eastern Labs 2SC5013 Datasheet HTML 4Page - California Eastern Labs 2SC5013 Datasheet HTML 5Page - California Eastern Labs 2SC5013 Datasheet HTML 6Page - California Eastern Labs  
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Data Sheet PU10518EJ01V0DS
2
NE68018 / 2SC5013
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 10 V, IE = 0 mA
−
−
1.0
μ
A
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0 mA
−
−
1.0
μ
A
DC Current Gain
hFENote1 VCE = 6 V, IC = 10 mA
50
100
250
−
RF Characteristics
Gain Bandwidth Product
fT
VCE = 6 V, IC = 10 mA
−
10
–
GHz
Insertion Power Gain
⏐
S21e⏐2 VCE = 6 V, IC = 10 mA, f = 2.0 GHz
7.5
9.5
−
dB
Noise Figure
NF
VCE = 6 V, IC = 5 mA, f = 2.0 GHz
−
1.8
3.0
dB
Reverse Transfer Capacitance
CreNote2 VCB = 10 V, IE = 0 mA, f = 1.0 MHz
−
0.25
0.8
pF
Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank
EB
FB
GB
Marking
R46
R47
R48
hFE Value
50 to 100
80 to 160
125 to 250



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