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SSFN3313 Fiches technique(PDF) 2 Page - Silikron Semiconductor Co.,LTD.

No de pièce SSFN3313
Description  High Power and current handing capability
PDF  5 Pages
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Fabricant  SILIKRON [Silikron Semiconductor Co.,LTD.]
Site Internet  http://www.silikron.com
Logo SILIKRON - Silikron Semiconductor Co.,LTD.

SSFN3313 Fiches technique(HTML) 2 Page - Silikron Semiconductor Co.,LTD.

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SSFN3313
Gate-Body Leakage Current
I
V =±25V,V =0V
±100
nA
GSS
GS
DS
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
V =V
GS(th)
DS
GS,ID=-250μA
-1.7
-2.2
-3
V
V =-4.5V, I
GS
D=-7A
13
17
mΩ
Drain-Source On-State Resistance
RDS(ON)
V =-10V, I
GS
D=-9A
11
14
mΩ
Forward Transconductance
g
V =-5V,I
FS
DS
D=-10A
18
S
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
C
1500
PF
lss
Output Capacitance
Coss
300
PF
V =-15V,V
Reverse Transfer Capacitance
Crss
DS
GS=0V,
F=1.0MHz
182
PF
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
t
12
nS
d(on)
Turn-on Rise Time
t
11
nS
r
Turn-Off Delay Time
td(off)
25
nS
V =-15V,V =-10V,R
Turn-Off Fall Time
tf
DS
GS
GEN=3Ω
ID=1A
10
nS
Total Gate Charge
Q
22
nC
g
Gate-Source Charge
Qgs
7
nC
V =-15V,I
Gate-Drain Charge
Qgd
DS
D=-10A,V
=-10V
GS
4.5
nC
Body Diode Reverse Recovery Time
T
29
nS
rr
IF=-10A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge
Q
15
nC
rr
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
V
V =0V,I =-1A
-0.74
-1
V
SD
GS
S
NOTES:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec.
3.
Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4.
Guaranteed by design, not subject to production testing.
©Silikron Semiconductor CO.,LTD.
2
http://www.silikron.com
v1.0



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