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RJS6004TDPEJ Fiches technique(PDF) 1 Page - Renesas Technology Corp

No de pièce RJS6004TDPEJ
Description  SiC Schottky Barrier Diode
PDF  4 Pages
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Fabricant  RENESAS [Renesas Technology Corp]
Site Internet  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJS6004TDPEJ Fiches technique(HTML) 1 Page - Renesas Technology Corp

  RJS6004TDPEJ Datasheet HTML 1Page - Renesas Technology Corp RJS6004TDPEJ Datasheet HTML 2Page - Renesas Technology Corp RJS6004TDPEJ Datasheet HTML 3Page - Renesas Technology Corp RJS6004TDPEJ Datasheet HTML 4Page - Renesas Technology Corp  
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R07DS0896EJ0300 Rev.3.00
Page 1 of 3
Jan 23, 2014
Preliminary Datasheet
RJS6004TDPP-EJ
600V - 10A - Diode
SiC Schottky Barrier Diode
Features
• New semiconductor material: Silicon Carbide Diode
• No reverse recovery / No forward recovery
Outline
1
2
1. Cathode
2. Anode
2
1
RENESAS Package code: PRSS0002ZA-A
(Package name: TO-220FP-2L)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Maximum reverse voltage
VRM
600
V
Continuous forward current
IF
10
A
Peak surge forward current
IFSM
60
A
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Forward voltage
VF
⎯
1.5
1.8
V
IF = 10 A
Reverse current
IR
⎯
⎯
10
μA
VR = 600 V
Reverse recovery time
trr
⎯
15
⎯
ns
IF = 10 A, di/dt = 300 A/
μs
R07DS0896EJ0300
Rev.3.00
Jan 23, 2014


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