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PCF8563 Fiches technique(PDF) 30 Page - NXP Semiconductors

No de pièce PCF8563
Description  Real-time clock/calendar
PDF  50 Pages
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Fabricant  NXP [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo NXP - NXP Semiconductors

PCF8563 Fiches technique(HTML) 30 Page - NXP Semiconductors

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PCF8563
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 10 — 3 April 2012
30 of 50
NXP Semiconductors
PCF8563
Real-time clock/calendar
11. Limiting values
[1]
Pass level; Human Body Model (HBM), according to Ref. 5 “JESD22-A114”.
[2]
Pass level; Charged-Device Model (CDM), according to Ref. 6 “JESD22-C101”.
[3]
Pass level; latch-up testing according to Ref. 7 “JESD78” at maximum ambient temperature (Tamb(max)).
[4]
According to the NXP store and transport requirements (see Ref. 9 “NX3-00092”) the devices have to be stored at a temperature of
+8
C to +45 C and a humidity of 25 % to 75 %. For long term storage products deviant conditions are described in that document.
Table 28.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDD
supply voltage
0.5
+6.5
V
IDD
supply current
50
+50
mA
VI
input voltage
on pins SCL, SDA,
and OSCI
0.5
+6.5
V
VO
output voltage
on pins CLKOUT and INT
0.5
+6.5
V
II
input current
at any input
10
+10
mA
IO
output current
at any output
10
+10
mA
Ptot
total power dissipation
-
300
mW
VESD
electrostatic discharge voltage
HBM
HVSON10 (PCF8563BS/4)
[1]
-
3500
V
DIP8 (PCF8563P/F4)
[1]
SO8 (PCF8563T/F4)
[1]
TSSOP8 (PCF8563TS/4)
[1]
SO8 (PCF8563T/5)
[1]
-
2000
V
TSSOP8 (PCF8563TS/5)
[1]
CDM
HVSON10 (PCF8563BS/4)
[2]
-
2000
V
DIP8 (PCF8563P/F4)
[2]
-
500
V
SO8 (PCF8563T/F4)
[2]
-
1000
V
SO8 (PCF8563T/5)
[2]
-
1500
V
TSSOP8 (PCF8563TS/4)
[2]
-
1500
V
TSSOP8 (PCF8563TS/5)
[2]
-
1750
V
Ilu
latch-up current
[3]
-200
mA
Tstg
storage temperature
[4]
65
+150
C
Tamb
ambient temperature
operating device
40
+85
C



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