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LM3410XMFE Fiches technique(PDF) 21 Page - Texas Instruments |
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LM3410XMFE Fiches technique(HTML) 21 Page - Texas Instruments |
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21 / 49 page ![]() LM3410, LM3410Q www.ti.com SNVS541G – OCTOBER 2007 – REVISED MAY 2013 Table 5. Operating Conditions VIN 3.3V VOUT 16.7V ILED 50mA VD 0.45V fSW 1.60MHz IQ 3mA tRISE 10nS tFALL 10nS RDSON 225m Ω LDCR 75m Ω D 0.82 IIN 0.31A ΣPCOND + PSW + PDIODE + PIND + PQ = PLOSS (36) Quiescent Power Loss: PQ = IQ x VIN = 10 mW (37) Switching Power Loss: PSWR = 1/2(VOUT x IIN x fSW x tRISE) ≊ 40 mW (38) PSWF = 1/2(VOUT x IIN x fSW x tFALL) ≊ 40 mW (39) PSW = PSWR + PSWF = 80 mW (40) Internal NFET Power Loss: RDSON = 225 mΩ (41) PCONDUCTION = IIN 2 x D x R DSON = 17 mW (42) IIN = 310 mA (43) Diode Loss: VD = 0.45V (44) PDIODE = VD x ILED = 23 mW (45) Inductor Power Loss: RDCR = 75 mΩ (46) PIND = IIN 2 x R DCR = 7 mW (47) Total Power Losses are: Table 6. Power Loss Tabulation VIN 3.3V VOUT 16.7V ILED 50mA POUT 825W VD 0.45V PDIODE 23mW fSW 1.6MHz IQ 10nS PSWR 40mW tRISE 10nS PSWF 40mW IQ 3mA PQ 10mW RDSON 225m Ω PCOND 17mW LDCR 75m Ω PIND 7mW D 0.82 η 85% PLOSS 137mW Copyright © 2007–2013, Texas Instruments Incorporated Submit Documentation Feedback 21 Product Folder Links: LM3410 LM3410Q |
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