STM32L151VBT6DTR datasheet(55/121 Pages) STMICROELECTRONICS

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STM32L151x6/8/B, STM32L152x6/8/B

Electrical characteristics

Doc ID 17659 Rev 8

55/121

Table 18.

Current consumption in Run mode, code with data processing running from RAM

Symbol

Parameter

Conditions

fHCLK

Typ

Max(1)

Unit

55 °C 85 °C 105 °C

IDD (Run

from

RAM)

Supply current

in Run mode,

code executed

from RAM,

Flash switched

off

fHSE = fHCLK

up to 8 MHz,

included

fHSE = fHCLK/2

above 8 MHz

(PLL ON)(2)

Range 3,

VCORE=1.2 V

VOS[1:0] = 11

1 MHz

200

300

µA

2 MHz

380

500

4 MHz

720

860

860(3)

Range 2,

VCORE=1.5 V

VOS[1:0] = 10

4 MHz

0.9

8 MHz

1.65

16 MHz

3.2

3.7

Range 1,

VCORE=1.8 V

VOS[1:0] = 01

8 MHz

2.5

16 MHz

4.5

32 MHz

7.7

8.5

HSI clock source

(16 MHz)

Range 2,

VCORE=1.5 V

VOS[1:0] = 10

16 MHz

3.3

3.8

Range 1,

VCORE=1.8 V

VOS[1:0] = 01

32 MHz

7.8

9.2

MSI clock, 65 kHz

Range 3,

VCORE=1.2 V

VOS[1:0] = 11

65 kHz

µA

MSI clock, 524 kHz

524 kHz

110

140

160

MSI clock, 4.2 MHz

4.2 MHz

700

800

820

Based on characterization, not tested in production, unless otherwise specified.

Oscillator bypassed (HSEBYP = 1 in RCC_CR register).

Tested in production.

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