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2STP535FP Fiches technique(PDF) 3 Page - STMicroelectronics

No de pièce 2STP535FP
Description  NPN power Darlington transistor
PDF  8 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

2STP535FP Fiches technique(HTML) 3 Page - STMicroelectronics

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2STP535FP
Electrical characteristics
Doc ID 16132 Rev 1
3/8
2
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 4.
Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICEO
Collector cut-off
current (IB = 0)
VCE = 180 V
50
µA
ICBO
Collector-base cut-off
current (IE = 0)
VCB = 180 V
50
µA
IEBO
Emitter-base cut-off
current (IC = 0)
VEB = 5 V
100
µA
VCEO(sus)
(1)
1.
Pulse test: pulse duration
≤300 µs, duty cycle ≤2 %.
Collector-emitter
sustaining voltage
(IB = 0)
IC = 30 mA
180
V
VCE(sat)
(1)
Collector-emitter
saturation voltage
IC = 3 A
IB = 6 mA
IC = 8 A
IB = 80 mA
2
2.5
V
V
VBE(on)
(1)
Base-emitter (on)
voltage
IC = 8 A
VCE = 4 V
2.8
V
hFE
(1)
DC current gain
IC = 3 A
VCE = 4 V
IC = 8 A
VCE = 4 V
1000
200
20000
VF
(1)
Diode forward voltage
IF = 10 A
2.8
V



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