ADP5063ACPZ-1-R7 datasheet(8/44 Pages) AD

8 / 44 page

ADP5063

Data Sheet

Rev. 0 | Page 8 of 44

ABSOLUTE MAXIMUM RATINGS

Table 4.

Parameter

Rating

VIN1, VIN2, VIN3 to AGND

–0.5 V to +20 V

All Other Pins to AGND

–0.3 V to +6 V

Continuous Drain Current, Battery Supple-

mentary Mode, from ISO_Bx to ISO_Sx

2.1 A

Storage Temperature Range

–65°C to +150°C

Operating Junction Temperature Range

–40°C to +125°C

Soldering Conditions

JEDEC J-STD-020

THERMAL RESISTANCE

θJA is specified for the worst-case conditions, that is, θJA is

specified for a device soldered in a circuit board for surface-

mount packages.

Table 5.

Package Type

θJA

θJC

Unit

20-Lead LFCSP

35.6

3.65

°C/W

Maximum Power Dissipation

The maximum safe power dissipation in the ADP5063 package

is limited by the associated rise in junction temperature (TJ) on

the die. At a die temperature of approximately 150°C (the glass

transition temperature), the properties of the plastic change.

Even temporarily exceeding this temperature limit may change

the stresses that the package exerts on the die, thereby perma-

nently shifting the parametric performance of the ADP5063.

Exceeding a junction temperature of 175°C for an extended

period can result in changes in the silicon devices, potentially

causing failure.

ESD CAUTION

Stresses above those listed under Absolute Maximum Ratings

may cause permanent damage to the device. This is a stress

rating only; functional operation of the device at these or any

other conditions above those indicated in the operational

section of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect

device reliability.

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