2

REVERSE VOLTAGE：VR(V)

VR-IR CHARACTERISTICS

IR DISRESION MAP

REVERSE VOLTAGE:VR(V)

VR-Ct CHARACTERISTICS

Ct DISRESION MAP

ZENER VOLTAGE:Vz(V)

Vz-Iz CHARACTERISTICS

ZENER CURRENT(mA)

Zz-Iz CHARACTERISTICS

Vz DISRESION MAP

TIME:t(s)

Rth-t CHARACTERISTICS

0.0001

0.001

0.01

0.1

1

10

100

1000

10000

0

5

10

15

20

25

Ta=25℃

Ta=-25℃

Ta=75℃

Ta=125℃

Ta=150℃

0

0.02

0.04

0.06

0.08

0.1

0.12

0.14

0.16

0.18

0.2

Ta=25℃

VR=3.5V

n=30pcs

AVE:0.0143nA

0.1

1

10

0

5

10

15

20

25

f=1MHz

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

AVE:0.884nF

Ta=25℃

f=1MHz

VR=0V

n=10pcs

0.001

0.01

0.1

1

10

25

26

27

28

29

30

31

32

33

34

Ta=75℃

Ta=-25℃

Ta=25℃

Ta=125℃

Ta=150℃

1

10

100

0.1

1

10

27

28

29

30

31

32

AVE:29.651V

Ta=25℃

IF=1mA

n=30pcs

0.1

1

10

100

1000

0.001

0.01

0.1

1

10

100

1000

Rth(j-a)

Rth(j-c)

1ms

IM=10mA

IF=0.5A

300us

time

Mounted on epoxy board

0

5

10

15

20

25

30

No break at 30kV

C=100pF

R=1.5kΩ

C=200pF

R=0Ω

No break at 30kV

ESD DISPERSION MAP



Absolute maximum ratings (Ta=25°C)

Symbol

Unit

Ppk

W

V

Tj

°C

Tstg

°C



Electrical characteristics (Ta=25°C)

Symbol

Min.

Typ.

Max.

Unit

Conditions

28.5

-

31.5

V

-

-

41.4

V

--

5

uA

Parameter

Limits

Peak pulse (tp=10×1000us)

600

Stand off power

25.6

Junction temperature

150

Clamping voltage

Reverse current

Storage temperature

55 to 150

Parameter

Breakdown voltage

RSA30L

ESD protection device (TVS)

星合电子

ＸＩＮＧＨＥ　ＥＬＥＣＴＲＯＮＩＣＳ

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