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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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L6480 Fiches technique(PDF) 27 Page - STMicroelectronics |
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L6480 Fiches technique(HTML) 27 Page - STMicroelectronics |
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27 / 73 page  L6480 Functional description Doc ID 023278 Rev 3 27/73 Figure 11. OSCIN and OSCOUT pin configuration Note: When OSCIN is UNUSED, it should be left floating. When OSCOUT is UNUSED it should be left floating. 6.9 Overcurrent detection The L6480 measures the load current of each half-bridge sensing the VDS voltage of all the Power MOSFETs (Figure 12). When any of the VDS voltages rise over the programmed threshold, the OCD flag in the STATUS register is forced low until the event expires and a GetStatus command is sent to the device (Section 9.1.24 and Section 9.2.20). The overcurrent event expires when all the Power MOSFET VDS voltages fall below the programmed threshold. The overcurrent threshold can be programmed by the OCD_TH register in one of 32 available values ranging from 31.25 mV to 1 V with steps of 31.25 mV (Table 18 Section 9.1.17). |
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