TIP31F datasheet(1/2 Pages) ISC

No de pièce	TIP31F

Description	isc Silicon NPN Power Transistors

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Fabricant	ISC [Inchange Semiconductor Company Limited]

Site Internet	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistors

TIP31F

DESCRIPTION

·DC Current Gain -hFE = 25(Min)@ IC= 1A

·Collector-Emitter Breakdown Voltage-

: V(BR) CEO= 160V(Min)

·Complement to Type TIP32F

APPLICATIONS

·Designed for use in general purpose amplifier and switching

applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

200

V

VCEO

Collector-Emitter Voltage

160

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

3

A

ICM

Collector Current-Pulse

5

A

IB

B

Base Current

1

A

PC

Collector Power Dissipation

TC=25℃

40

W

Tj

Junction Temperature

150

℃

Tstg

Storage Ttemperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

3.125

℃/W

isc Website：www.iscsemi.cn

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