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TIP31F Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited |
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TIP31F Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors TIP31F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 160 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.75A B 2.5 V VBE(on) Base-Emitter On Voltage IC= 3A; VCE= 4V 1.8 V ICES Collector Cutoff Current VCE= 200V; VEB= 0 0.2 mA ICEO Collector Cutoff Current VCE= 90V; IB= 0 B 0.3 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 1A ; VCE= 4V 25 hFE-2 DC Current Gain IC= 3A ; VCE= 4V 5 fT Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 10V 3 MHz isc Website:www.iscsemi.cn |
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