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SBT80-04GS Fiches technique(PDF) 2 Page - Sanyo Semicon Device |
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SBT80-04GS Fiches technique(HTML) 2 Page - Sanyo Semicon Device |
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2 / 3 page ![]() SBT80-04GS No. A0796-2/3 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Reverse Voltage VR IR=1mA, Tj=25°C * 40 V Forward Voltage VF IF=3.0A, Tj=25°C * 0.55 V Reverse Current IR VR=20V, Tj=25°C * 0.1 mA Interterminal Capacitance C VR=10V, Tj=25°C * 160 pF Thermal Resistance Rth(j-c) Junction-Case : Smoothed DC 4.6 °C / W Note) * : Value per element 0 1.0 10 0.4 1.6 1.2 0.8 5 7 2 3 5 7 2 3 5 7 2 3 3 2 0.01 0.1 Tj=150 °C 25° C IT08506 0 10 1.0 5 7 5 7 3 2 5 7 3 2 100 10 20 30 40 50 (3) (1) 0 0 4 5 7 6 3 1 2 110 9 58 7 6 34 2 IT08508 (4) (3) (1) 0 0 1.5 2.0 3.0 2.5 1.0 0.5 40 50 30 20 10 (2) (4) (2) IT08507 IT08509 Tj=150 °C max 150 °C typ 125 °C typ 100 °C typ IF -- VF IR -- VR PF(AV) -- IO PR(AV) -- VRM PR max at Tj=150°C Forward Voltage, VF -- V Reverse Voltage, VR -- V Peak Reverse Voltage, VRM -- V Average Output Current, IO -- A 180 ° 360 ° θ 360 ° 180 ° 360 ° VR (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° (1)Rectangular wave θ=300° (2)Rectangular wave θ=240° (3)Rectangular wave θ=180° (4)Sine wave θ=180° Sine wave Sine wave Rectangular wave θ 360 ° VR Rectangular wave Represented by max C -- VR Reverse Voltage, VR -- V 1.0 2 1000 100 2 3 5 7 5 7 35 7 10 23 5 7 7 f=100kHz ID01008 Tc -- IO Average Output Current, IO -- A (4) (3) 0 123 110 120 130 170 160 150 140 100 90 45 7 9 810 6 (2) (1) IT12854 (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° θ 360 ° Rectangular wave 180 ° 360 ° Sine wave |
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