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BD911 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited

No de pièce BD911
Description  Silicon NPN Power Transistors
PDF  4 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BD911 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited

  BD911 Datasheet HTML 1Page - Inchange Semiconductor Company Limited BD911 Datasheet HTML 2Page - Inchange Semiconductor Company Limited BD911 Datasheet HTML 3Page - Inchange Semiconductor Company Limited BD911 Datasheet HTML 4Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
2
Silicon NPN Power Transistors
BD909 BD911
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
BD909
80
VCEO(SUS)
Collector-emitter
sustaining voltage
BD911
IC=0.1A; IB=0
100
V
VCEsat-1
Collector-emitter saturation voltage
IC=5 A;IB=0.5 A
1.0
V
VCEsat-2
Collector-emitter saturation voltage
IC=10A;IB=2.5 A
3.0
V
VBEsat
Base-emitter saturation voltage
IC=10A;IB=2.5 A
2.5
V
VBE
Base-emitter voltage
IC=5A ; VCE=4V
1.5
V
BD909
VCB=80V; IE=0
TC=150℃
0.5
5
ICBO
Collector cut-off current
BD911
VCB=100V; IE=0
TC=150℃
0.5
5
mA
BD909
VCE=40V; IB=0
ICEO
Collector cut-off current
BD911
VCE=50V; IB=0
1
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
1
mA
hFE-1
DC current gain
IC=0.5A ; VCE=4V
40
250
hFE-2
DC current gain
IC=5A ; VCE=4V
15
150
hFE-3
DC current gain
IC=10A ; VCE=4V
5
fT
Transition frequency
IC=0.5A ; VCE=4V
3
MHz



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