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BD375 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

No de pièce BD375
Description  isc Silicon NPN Power Transistors
PDF  2 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BD375 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
BD375/377/379
DESCRIPTION
·DC Current Gain-
: hFE= 20(Min)@ IC= 1A
·Complement to Type BD376/378/380
APPLICATIONS
·Designed for medium power linear and switching
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BD375
50
BD377
75
VCBO
Collector-Base Voltage
BD379
100
V
BD375
45
BD377
60
VCEO
Collector-Emitter Voltage
BD379
80
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
2
A
ICM
Collector Current-Peak
3
A
IB
B
Base Current-Continuous
1
A
PC
Collector Power Dissipation
@ TC=25℃
25
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn


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