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2SD673 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

No de pièce 2SD673
Description  isc Silicon NPN Power Transistors
Download  2 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD673 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
2SD673
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min)
·High Power Dissipation-
: PC= 60W(Max)@TC=25℃
·Complement to Type 2SB653
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
12
A
IB
B
Base Current-Continuous
2
A
PC
Collector Power Dissipation
@TC=25℃
60
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃
isc Website：www.iscsemi.cn


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