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2SD673 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited

No de pièce 2SD673
Description  isc Silicon NPN Power Transistors
Download  2 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD673 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited

  2SD673 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2SD673 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
2SD673
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 50mA; RBE= ∞
100
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 5mA; IC= 0
5
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 5A; IB= 0.5A
B
3.0
V
VBE(on)
Base-Emitter On Voltage
IC= 1A; VCE= 5V
1.5
V
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
1
mA
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
60
200
hFE-2
DC Current Gain
IC= 5A; VCE= 5V
20
hFE-1 Classifications
B
C
60-120
100-200
isc Website：www.iscsemi.cn


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